advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces high speed switching i c low saturation voltage v ce(sat),typ. =1.85v@i c =45a built-in fast recovery diode absolute maximum ratin g s , 1/8" from case for 5 seconds . notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-c(diode) rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces --1ma v ce(sat) - 1.85 2.4 v v ge(th) 2.5 - 7.5 v q g - 118 188 nc q ge -30- nc q gc -64- nc t d(on) -60- ns t r -50- ns t d(off) - 140 - ns t f - 180 360 ns e on - 0.8 - mj e off - 1.4 - mj c ies - 3200 5120 pf c oes - 240 - pf c res -75- pf v f - 1.45 1.8 v t rr -60- ns q rr - 120 - nc data and specifications subject to change without notice frd forward voltage i f =20a turn-on switching loss turn-off switching loss v ce =300v, i c =45a, v ge =15v, r g =5 , inductive load v ge =0v reverse transfer capacitance rise time fall time turn-off delay time frd reverse recovery time i f =20a frd reverse recovery charge di/dt = 100 a/us input capacitance v ce =30v a p50gt60sw-hf symbol v ces 600v 45a rating collector-emitter voltage units rohs compliant & halogen-free v 600 parameter a v 180 a + 30 90 a 1.2 v ge i c @t c =25 o c collector current gate-emitter voltage -55 to 150 150 storage temperature range i f @t c =100 o c diode forward current a o c/w o c w o c/w 20 collector-emitter leakage current gate threshold voltage units o c/w v ge =15v, i c =45a v ge =+ 30v, v ce =0v value 0.5 parameter thermal resistance junction-case halogen-free product maximum power dissipation test conditions thermal resistance junction-case 300 thermal resistance junction-ambient i cm 250 parameter pulsed collector current 1 output capacitance f=1.0mhz o c 40 turn-on delay time total gate charge gate-to-emitter leakage current collector-emitter saturation voltage 201107271 o c v ce =400v gate-collector charge i c =45a v ce =600v, v ge =0v v ge =15v v ce =v ge , i c =250ua gate-emitter charge i c @t c =100 o c collector current 45 maximum lead temp. for soldering purposes p d @t c =25 o c t j t stg operating junction temperature range t l g c e to-3p c g c e
ap50gt60sw-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature -- fig 5. gate charge characterisitics fi g 6. t y pical capacitance characterisitics 2 0 50 100 150 200 250 300 0102030 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c 1 1 2 2 3 3 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =50a i c =33a v ge =15v 0 4 8 12 16 0 40 80 120 160 q g , gate charge (nc) v ge , gate -emitter voltage (v) 0 20 40 60 80 100 012345 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 o c 0 1000 2000 3000 4000 5000 1 5 9 131721252933 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 o c 0 20 40 60 80 100 120 0 4 8 12 16 20 v ce , collector-emitter voltage (v) i c , collector current (a) t c =150 o c i c =45a v cc =400v 20v 18v 15v 12v v ge =10v
a p50gt60sw-hf fig 7. power dissipation vs. junction fig 8. effective transient thermal temperature impedance, junction-to-case (igbt) fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig 11. forward characteristic of fig 12. soa characteristics diode 3 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =50a 33 a 15 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =50a 33 a 15 a t c = 150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2 v f , forward voltage (v) i f , forward current (a) t j =25 o c t j =150 o c 0 100 200 300 0 50 100 150 200 junction temperature ( o c ) power dissipation (w) 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 v ce ,collector - emitter voltage(v) i c ,collctor current(a) t c =25 o c single pulse 10us 100us 1ms 10ms
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